JPH034028Y2 - - Google Patents
Info
- Publication number
- JPH034028Y2 JPH034028Y2 JP15023387U JP15023387U JPH034028Y2 JP H034028 Y2 JPH034028 Y2 JP H034028Y2 JP 15023387 U JP15023387 U JP 15023387U JP 15023387 U JP15023387 U JP 15023387U JP H034028 Y2 JPH034028 Y2 JP H034028Y2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- substrate
- quartz tube
- heat sink
- internal heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 239000010453 quartz Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000003708 ampul Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000001556 precipitation Methods 0.000 description 3
- 150000001721 carbon Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IYSYLWYGCWTJSG-XFXZXTDPSA-N n-tert-butyl-1-phenylmethanimine oxide Chemical compound CC(C)(C)[N+](\[O-])=C\C1=CC=CC=C1 IYSYLWYGCWTJSG-XFXZXTDPSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15023387U JPH034028Y2 (en]) | 1987-09-30 | 1987-09-30 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15023387U JPH034028Y2 (en]) | 1987-09-30 | 1987-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6457637U JPS6457637U (en]) | 1989-04-10 |
JPH034028Y2 true JPH034028Y2 (en]) | 1991-02-01 |
Family
ID=31423190
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15023387U Expired JPH034028Y2 (en]) | 1987-09-30 | 1987-09-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH034028Y2 (en]) |
-
1987
- 1987-09-30 JP JP15023387U patent/JPH034028Y2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6457637U (en]) | 1989-04-10 |
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